SM72295

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SNVS688E – OCTOBER 2010 – REVISED APRIL 2013

PIN DESCRIPTIONS (continued)

Pin

Name

Description

Application Information

19, 27

HOA,

High side gate driver output

Connect to gate of high side MOSFET with a short low inductance path.

HOB

20,26

HBA,

High side gate driver bootstrap rail.

Connect the positive terminal of the bootstrap capacitor to HB and the negative

HBB

terminal to HS. The bootstrap capacitor should be placed as close to IC as

possible.

21,25

VCCA,

Positive gate drive supply

Locally decouple to PGND using low ESR/ESL capacitor located as close to IC

VCCB

as possible.

22, 24

LOA,

Low side gate driver output

Connect to the gate of the low side MOSFET with a short low inductance path.

LOB

23

PGND

Power ground return

Ground return for the LO drivers. Tie to the ground plane under the IC

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

VCCA, VCCB

-0.3 to 14V

VDD

-0.3 to 7V

HBA to HSA, HBB to HSB

-0.3 to 15V

LIA,LIB,HIA,HIB,OVS

-0.3 to 7V

LOA,LOB

-0.3 to VCC+ 0.3V

HOA,HOB

HS–0.3 to HB + 0.3V

SIA,SOA,SIB,SOB

-0.3 to 100V

SIA to SOA, SIB to SOB

-0.8 to 0.8V

HSA,HSB(3)

-5 to 100V

HBA, HBB

115V

PGOOD, OVP

-0.3 to VDD

IIN, IOUT

-0.3 to VDD

BIN, BOUT

-0.3 to VDD

Junction Temperature

150°C

Storage Temperatue Range

-55°C to +150°C

ESD Rating(4)

Human Body Model

2 kV

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under

which operation of the device is ensured. Operating Ratings do not imply ensured performance limits. For ensured performance limits

and associated test conditions, see the Electrical Characteristics tables.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.

(3)

In the application the HS nodes are clamped by the body diode of the external lower N-MOSFET, therefore the HS node will generally

not exceed –1V. However, in some applications, board resistance and inductance may result in the HS node exceeding this stated

voltage transiently. If negative transients occur, the HS voltage must never be more negative than VCC-15V. For example if VCC = 10V,

the negative transients at HS must not exceed –5V.

(4)

The human body model is a 100 pF capacitor discharged through a 1.5 k

Ω resistor into each pin. 2 kV for all pins except HB, HO & HS

which are rated at 1000V.

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