SN65EPT23

SLLS969A

– NOVEMBER 2009 – REVISED JANUARY 2011

www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

CONDITION

VALUE

UNIT

Absolute supply voltage, VCC

GND = 0V

3.8

V

Absolute input voltage, VI

GND = 0 and Vi

≤ VCC

0 to 3.8

V

Continuous

50

Output current

mA

Surge

100

Operating temperature range

–40 to 85

°C

Storage temperature range

–65 to 150

°C

POWER DISSIPATION RATINGS

POWER RATING

THERMAL RESISTANCE,

DERATING FACTOR

POWER RATING

CIRCUIT BOARD

JUNCTION TO AMBIENT

PACKAGE

TA < 25°C

TA > 25°C

TA = 85°C

MODEL

NO AIRFLOW

(mW)

(mW/

°C)

(mW)

SOIC

Low-K

719

139

7

288

High-K

840

119

8

336

MSOP

Low-K

469

213

5

188

High-K

527

189

5

211

THERMAL CHARACTERISTICS

PARAMETER

PACKAGE

VALUE

UNIT

qJB

Junction-to Board Thermal Resistance

SOIC

79

°C/W

MSOP

120

qJC

Junction-to Case Thermal Resistance

SOIC

98

°C/W

MSOP

74

KEY ATTRIBUTES

CHARACTERISTICS

VALUE

Moisture sensitivity level

Level 1

Flammability rating (Oxygen Index: 28 to 34)

UL 94 V-0 at 0.125 in

ESD-HBM

2 kV

ESD-machine model

200 V

ESD-charge device model

2 kV

Internal pull down resistor

50 k

Ω

Internal pull up resistor

50 k

Ω

Meets or exceeds JEDEC Spec EIA/JESD78 latchup test

2

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