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IRG4PC40KDPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRG4PC40KDPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 11 page  Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 42 IC @ TC = 100°C Continuous Collector Current 25 ICM Pulsed Collector Current 84A ILM Clamped Inductive Load Current 84 IF @ TC = 100°C Diode Continuous Forward Current 15 IFM Diode Maximum Forward Current 84 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 160 PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) IRG4PC40KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features E G n-channel C VCES = 600V VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A Short Circuit Rated UltraFast IGBT Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Benefits Generation 4 IGBTs offer highest efficiencies available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs PD -94912 TO-247AC Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT 0.77 RθJC Junction-to-Case - Diode 1.7 °C/W RθCS Case-to-Sink, flat, greased surface 0.24 RθJA Junction-to-Ambient, typical socket mount 40 Wt Weight 6 (0.21) g (oz) Thermal Resistance Absolute Maximum Ratings W 12/29/03 www.irf.com 1 Lead-Free |
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