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AM0608-200 Datasheet(PDF) 1 Page - STMicroelectronics |
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AM0608-200 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 3 page ![]() PRELIMINARY DATA August 1992 AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .400 2NLFL (S042) hermetically sealed . REFRACTORY/GOLD METALLIZATION . INTERNAL INPUT MATCHING . METAL/CERAMIC HERMETIC PACKAGE . POUT = 220 W MIN. WITH 8.7 dB GAIN DESCRIPTION The AM0608-200 is an internally-matched, com- mon base silicon bipolar device optimized pulsed application in the 600 - 750 MHz frequency range. Housed in the industry-standard AMPAC™ met- al/ceramic package, this device uses a refrac- tory/gold overlay die geometry for ruggedness and long-term reliability. PIN CONNECTION BRANDING 0608-200 ORDER CODE AM0608-200 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 75˚C) 875 W IC Device Current* 16.0 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C RTH(j-c) Junction-Case Thermal Resistance* 0.20 °C/W *Applies only to rated RF amplifier operation AM0608-200 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA 1/3 |
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