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AM0912-300 Datasheet(PDF) 1 Page - STMicroelectronics

Part # AM0912-300
Description  AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS
PDF  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AM0912-300 Datasheet(HTML) 1 Page - STMicroelectronics

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September 1992
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .500 2LFL (S038)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
15:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 300 W MIN. WITH 7.0 dB GAIN
.
BANDWIDTH 255 MHz
DESCRIPTION
The AM0912-300 avionics power transistor is a
broadband, high peak pulse power device speci-
fically designed for avionics applications requiring
broad bandwidth with moderate duty cycle and
pulse width constraints such as ground/ship based
DME/TACAN.
The AM0912-300 is also designed for specialized
applications where reduced power is provided
under pulse formats utilizing short pulse widths
and high burst or overall duty cycles.
This device is capable of withstanding 15:1 VSWR
mismatch load condition at any phase angle under
full rated conditions.
The AM0912-300 is housed in the unique BIG-
PAC
™ Hermetic Metal/Ceramic package with in-
ternal Input/Output matching structures.
PIN CONNECTION
BRANDING
0912-300
ORDER CODE
AM0912-300
ABSOLUTE MAXIMUM RATINGS (Tcase
= 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤ 100°C)
940
W
IC
Device Current*
24
A
VCC
Collector-Supply Voltage*
50
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
− 65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
0.16
°C/W
*Applies only to rated RF amplifier operation
AM0912-300
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/6


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