AM1011-300 datasheet(1/5 Pages) STMICROELECTRONICS

Part #	AM1011-300

Description	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

.400x.6002L FL (M207)

hermetically sealed

.

REFRACTORY/GOLD METALL IZATION

.

EMITTER SITE BALLASTING

.

LOW RF THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 325 W MIN. WITH 7.7 dB GAIN

.

1030/1090 MHZ OPERATION

DESCRIPTION

The AM1011-300 is a rugged, Class C common

base device specifically designed for new Mode-

S interrogator and transponder applications.

Minimal amplitude droop over the heavy Mode-S

pulse burst is guarante ed by a thermal design in-

corporating an overlay site-ballasted die geome-

try.

PIN CONNECTION

BRANDING

AM1011-300

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Un it

PDISS

Power Dissipation

(TC

≤100°C)*

1070

W

IC

Device Current*

36

A

VCC

Collector-Supply Voltage*

43

V

TJ

Junction Temperature (Pulsed RF operation)

+250

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

0.14

°C/W

*Applies only to rated RF amplifier operation.

AM1011-300

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

O RDER CODE

AM1011-300

December 9, 1997

1/5

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