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AM1517-012 Datasheet(PDF) 1 Page - STMicroelectronics

Part # AM1517-012
Description  SATELLITE COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS
PDF  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AM1517-012 Datasheet(HTML) 1 Page - STMicroelectronics

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September 1992
SATELLITE COMMUNICATIONS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2NLFL (S042)
hermeticallysealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.∞
:1 VSWR CAPABILITY
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 12 W MIN. WITH 8.5 dB GAIN
DESCRIPTION
The AM1517-012 power transistor is designed spe-
cifically for Satellite communications applications
in the 1.5
− 1.7 GHz frequency range.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
∞:1) under full rated conditions. The unit is an
overlay, emitter site ballasted, geometry utilizing
a Refractory/Gold metallization system.
The AM1517-012 is supplied in the AMPAC
™ Her-
metic/Ceramic package with internal Input/Output
matching structures.
PIN CONNECTION
BRANDI NG
1517-12
ORDER CODE
AM1517-012
ABSOLUTE MAXIMUM RATINGS (Tcase
= 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤100°C)
27
W
IC
Device Current*
1.25
A
VCC
Collector-Supply Voltage*
30
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
− 65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
5.5
°C/W
*Applies only to rated RF amplifier operation
AM1517-012
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/6


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