AM80610-030 datasheet(1/3 Pages) STMICROELECTRONICS

Part #	AM80610-030

Description	RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS

PDF	3 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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RF & MICROWAVE TRANSISTORS

UHF COMMUNICATIONS APPLICATIONS

.400 x .400 2NLF L (S042)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

INPUT/OUTPUT MATCHING

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 30 W MIN. WITH 8.5 dB GAIN

DESCRIPTION

The AM80610-030 is a high po wer, common

base NPN silicon bipolar device optimized for

CW operation in the 620 - 960 MHz frequency

range.

AM80610-030 utilizes a rugged, overlay, emitter-

ballasted L-Band die geometry to achieve high

gain and collector efficiency and is suitable for

driver or output stage use in Class C power am-

plifiers. Typical applications include military com-

munications, ECM, and test equipment.

The AM80610-030 is provided in the industry-

standard, metal/ceramic AMPAC

™ hermetic

package.

PIN CONNECTION

BRANDING

80610-30

ORDER CODE

AM80610-030

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Uni t

PDISS

Power Dissipation*

(TC

≤ 50°C)

57

W

IC

Device Current*

3.0

A

VCC

Collector-Supply Voltage*

32

V

TJ

Junction Temperature

200

°C

TSTG

Storage Temperature

− 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

2.6

°C/W

*Applies only to rated RF amplifier operation

AM80610-030

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

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