AM80814-005 datasheet(1/5 Pages) STMICROELECTRONICS

Part #	AM80814-005

Description	L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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August 1992

L-BAND RADAR APPLICATIONS

RF & MICROWAVE TRANSISTORS

.310 x . 310 2LFL (S064)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

5:1 VSWR CAPABILITY

.

LOW THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

POUT

= 5.0 W MIN. WITH 8.5 dB GAIN

DESCRIPTION

The AM80814-005 device is a high power Class

C transistor specifically designed for L-Band radar

pulsed driver applications.

This device is capable of operation over a wide

range of pulse widths, duty cycles and tempera-

tures and is capable of withstanding 5:1 output

VSWR at rated RF conditions. Low thermal re-

sistance and computerized automatic wire bonding

techniques ensure high reliability and product con-

sistency.

The AM80814-005 is supplied in the IMPAC

™ Her-

meti c M etal/ Cer amic package with internal

Input/Output matching structures.

PIN CONNECTION

BRANDING

80814-5

ORDER CODE

AM80814-005

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Uni t

PDISS

Power Dissipation*

(TC

≤ 100°C)

23

W

IC

Device Current*

1.0

A

VCC

Collector-Supply Voltage*

28

V

TJ

Junction Temperature (Pulsed RF Operation)

250

°C

TSTG

Storage Temperature

- 65 to +200

°C

RTH(j-c)

Junction-Case Thermal Resistance*

6.5

°C/W

*Applies only to rated RF amplifier operation

AM80814-005

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/5

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