STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1

2/15

Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

Table 4: Thermal Data

(#) When mounted on 1inch² FR-4 BOARD, 2 oz Cu

Table 5: Avalanche Characteristics

Table 6: GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Value

Unit

TO-92

SOT-223

DPAK/IPAK

800

V

800

V

Gate- source Voltage

± 30

V

0.3

0.25

1.0

A

0.19

0.16

0.63

A

Drain Current (pulsed)

5

A

3

2.5

45

W

Derating Factor

0.025

0.02

0.36

W /°C

Gate source ESD (HBM-C= 100pF, R= 1.5K

Ω)

1000

V

dv/dt (1)

Peak Diode Recovery voltage slope

4.5

V/ns

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

TO-92

SOT-223

DPAK/IPAK

Unit

Rthj-case

Thermal Resistance Junction-case Max

--

--

2.78

°C/W

Rthj-amb(#)

Thermal Resistance Junction-ambient Max

120

50

100

°C/W

Rthj-lead

Thermal Resistance Junction-lead Max

40

--

--

°C/W

Maximum Lead Temperature For Soldering

Purpose

260

--

300

°C

Symbol

Parameter

Max Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

1

A

Single Pulse Avalanche Energy

50

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open

Drain)

30

V