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CSD19534KCS Datasheet(PDF) 3 Page - Texas Instruments |
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CSD19534KCS Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 13 page  4 Specifications 4.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0V, ID = 250μA 100 V IDSS Drain-to-Source Leakage Current VGS = 0V, VDS = 80V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250μA 2.4 2.8 3.4 V RDS(on) Drain-to-Source On-Resistance VGS = 6V, ID = 30A 16.3 20.0 mΩ VGS = 10V, ID = 30A 13.7 16.5 mΩ gfs Transconductance VDS = 10V, ID = 30A 80 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0V, VDS = 50V, ƒ = 1MHz 1290 1670 pF Coss Output Capacitance 257 334 pF Crss Reverse Transfer Capacitance 5.7 7.4 pF RG Series Gate Resistance 1.1 2.2 Ω Qg Gate Charge Total (10V) VDS = 50V, ID = 30A 17.1 22.2 nC Qgd Gate Charge Gate-to-Drain 3.2 nC Qgs Gate Charge Gate-to-Source 5.1 nC Qg(th) Gate Charge at Vth 3.3 nC Qoss Output Charge VDS = 50V, VGS = 0V 44 nC td(on) Turn On Delay Time VDS = 50V, VGS = 10V, IDS = 30A, RG = 0Ω 6 ns tr Rise Time 2 ns td(off) Turn Off Delay Time 9 ns tf Fall Time 1 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage ISD = 30A, VGS = 0V 0.9 1.1 V Qrr Reverse Recovery Charge VDS= 50V, IF = 30A, di/dt = 300A/μs 195 nC trr Reverse Recovery Time 72 ns 4.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-Case Thermal Resistance 1.3 °C/W RθJA Junction-to-Ambient Thermal Resistance 62 www.ti.com CSD19534KCS SLPS530A – JANUARY 2015 – REVISED DECEMBER 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3 Product Folder Links: CSD19534KCS |
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