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AM81719-030 Datasheet(PDF) 1 Page - STMicroelectronics

Part # AM81719-030
Description  TELEMETRY APPLICATIONS RF & MICROWAVE TRANSISTORS
PDF  4 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AM81719-030 Datasheet(HTML) 1 Page - STMicroelectronics

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PRELIMINARY DATA
September 1992
TELEMETRY APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 400 SQ 2LFL (M147)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 28 W MIN. WITH 6.7 dB GAIN
DESCRIPTION
The AM81719-030 is a high power silicon NPN
bipolar transistor designed for Class C, CW com-
munications and telemetry applications in the 1.75
- 1.85 GHz frequency range.
An emitter site ballasted refractory/gold overlay
die geometry computerized automatic wire bonding
is employed to ensure long term reliability and
product consistency.
AM81719-030 is supplied in the industry-standard
AMPAC
™ hermetic metal/ceramic package.
PIN CONNECTION
BRANDING
81719-030
ORDER CODE
AM81719-030
ABSOLUTE MAXIMUM RATINGS (Tcase
= 25°C)
Symbol
Parameter
Value
Uni t
PDISS
Power Dissipation*
67.3
W
IC
Device Current*
2.67
A
VCC
Collector-Supply Voltage*
28
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
− 65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
2.6
°C/W
*Applies only to rated RF amplifier operation
AM81719-030
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4


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