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AM81719-040 Datasheet(PDF) 1 Page - STMicroelectronics

Part # AM81719-040
Description  RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS
PDF  3 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AM81719-040 Datasheet(HTML) 1 Page - STMicroelectronics

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RF & MICROWAVE TRANSISTORS
TELEMETRY APPLICATIONS
. 400 X .400 2 LF L (M228)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 40 W MIN. WITH 7 dB GAIN
DESCRIPTION
The AM81719-040 is a high power silicon NPN
bipolar transistor designed for Class C, CW com-
munications and telemetry applications in the
1.75 - 1.85 GHz frequency range.
An emitter-ballasted refractory-gold overlay die
geometry with computerized automatic wire-
bonding is employed to ensure long-term reliabil-
ity and product consistency.
PIN CONNECTION
BRANDING
81719-40
ORDER CO DE
AM81719-040
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Valu e
Un it
PDISS
Power Dissipation*
79.5
W
IC
Device Current*
4.8
A
VCC
Collector-Supply Voltage*
30
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
− 65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
2.2
°C/W
*Applies only to rated RF amplifier operation
AM81719-040
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
PRELI MINARY DAT A
July 6, 1995
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