5.5 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

PARAMETER

MIN

NOM

MAX

UNIT

VIN

Input voltage

-36

36

V

TA

Operating free-air temperature

-55

150

°C

5.6 Thermal Information

THERMAL METRIC(1)

ESD2CAN36-Q1

ESD2CANFD36-Q1

UNIT

DBZ (SOT-23)

DBZ (SOT-23)

3 PINS

3 PINS

RθJA

Junction-to-ambient thermal resistance

293.4

313.5

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

148.9

162.8

°C/W

RθJB

Junction-to-board thermal resistance

133.0

151.8

°C/W

ΨJT

Junction-to-top characterization parameter

32.9

43.5

°C/W

ΨJB

Junction-to-board characterization parameter

132.0

150.8

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

5.7 Electrical Characteristics

over TA = 25°C (unless otherwise noted)(1)

PARAMETER

TEST CONDITIONS

DEVICE

MIN

TYP

MAX

UNIT

VRWM

Reverse stand-off voltage

–36

36

V

VBRF

Breakdown voltage(2)

IIO = 10mA, IO to GND

37.8

40

44.2

V

VBRR

IIO = –10mA, IO to GND

–37.8

-40

–44.2

V

VCLAMP

Clamping voltage(3)

IPP = 1A, tp = 8/20µs, IO to GND

ESD2CAN36-Q1

43

V

VCLAMP

IPP = 4.3A, tp = 8/20µs, IO to GND

ESD2CAN36-Q1

61

V

VCLAMP

IPP = 1A, tp = 8/20µs, IO to GND

ESD2CANFD36-Q1

47

V

VCLAMP

IPP = 3.1A, tp = 8/20µs, IO to GND

ESD2CANFD36-Q1

61

V

VCLAMP

Clamping voltage(4)

IPP = 16 A, TLP, IO to GND or GND to IO

ESD2CAN36-Q1

63

V

VCLAMP

ESD2CANFD36-Q1

64

V

ILEAK

Leakage current

VIO = ±24 V, IO to GND

-50

5

50

nA

RDYN

Dynamic resistance(4)

IO to GND and GND to IO

ESD2CAN36-Q1

0.49

Ω

ESD2CANFD36-Q1

0.49

Ω

CL

Line capacitance(5)

VIO = 0 V, f = 1MHz, Vpp = 30mV

ESD2CAN36-Q1

2.8

3.5

pF

ESD2CANFD36-Q1

2.6

2.9

(1)

Measurements made on each IO channel

(2)

VBRF and VBRR are defined as the voltage when ±10mA is applied in the positive and negative going direction respectively, before the

device latches into the snapback state

(3)

Device stressed with 8/20μs exponential decay waveform according to IEC 61000-4-5

(4)

Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008

(5)

Measured from IO to GND on each channel

ESD2CAN36-Q1, ESD2CANFD36-Q1

SLVSH16A – FEBRUARY 2024 – REVISED MARCH 2024

www.ti.com

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