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AM83135-050 Datasheet(PDF) 1 Page - STMicroelectronics

Part # AM83135-050
Description  RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
PDF  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AM83135-050 Datasheet(HTML) 1 Page - STMicroelectronics

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November 27, 1996
S-BAND RADAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
. 310 x .310 2LF L (S064)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
RUGGEDIZED VSWR 3:1 @ 1dB
OVERDRIVE
.
LOW THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
POUT
= 50 W MIN. WITH 5.2 dB GAIN
DESCRIPTION
The AM83135-050 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
This device is characterized at 10
µsec pulsewidth
and 10% duty cycle, but is capable of operation
over a range of pulse widths, duty cycles and tem-
peratures and can withstand a 3:1 output VSWR
with a +1 dB input overdrive. Low RF thermal re-
sistance, refractory/gold metallization, and com-
puterized automatic wire bonding techniques en-
sure high reliability and product consistency (in-
cluding phase characteristics).
The AM83135-050 is supplied in the IMPAC
™ Her-
metic Meta l/Ceramic package with internal In-
put/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
plications.
PIN CONNECTION
BRANDING
83135-50
O RDER CODE
AM83135-050
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
RTH(j-c)
Junction-Case Thermal Resistance*
0.40
°C/W
*Applies only to rated RF amplifier operation
AM83135-050
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
Symbol
Parameter
Value
Un it
PDISS
Power Dissipation*
(TC
≤ 125°C)
312
W
IC
Device Current*
8.0
A
VCC
Collector-Supply Voltage*
48
V
TJ
Junction Temperature (Pulsed RF Operation)
250
°C
TSTG
Storage Temperature
− 65 to +200
°C
1/6


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