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M41T315Y Datasheet(PDF) 12 Page - STMicroelectronics |
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M41T315Y Datasheet(HTML) 12 Page - STMicroelectronics |
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12 / 30 page ![]() Operation M41T315Y, M41T315V, M41T315W 12/30 Figure 7. Write mode waveforms DATA INPUT STABLE OE D CEI tWP tWC tCW tDH tWR tWR WE t DH tDS AI04261 Table 3. AC electrical characteristics (M41T315Y) Symbol Parameter(1) Min Typ Max Units tAVAV tRC READ cycle time 65 ns tELQV tCO CEI access time 55 ns tGLQV tOE OE access time 55 ns tELQX tCOE CEI to output low Z 5 ns tGLQX tOEE OE to output low Z 5 ns tEHQZ tOD CEI to output high Z 25 ns tGHQZ tODO OE to output high Z 25 ns tRR READ recovery 10 ns tELEH tCW CEI pulse width 55 ns tGLGH tOW OE pulse width 55 ns tAVAV tWC WRITE cycle 65 ns tWLWH tWP WRITE pulse width 55 ns tEHAX tWHAX tWR (2) WRITE recovery 10 ns tDVEH tDVWH tDS (3) Data setup 30 ns tEHDX tWHDX tDH (3) Data hold time 0 ns tRST RST pulse width 65 ns 1. Valid for ambient operating temperature: TA = –40 to 85°C; VCC = 4.5 to 5.5V (except where noted). 2. tWR is a function of the latter occurring edge of WE or CEI. 3. tDH and tDS are functions of the first occurring edge of WE or CEI in RAM mode. |
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