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BDY90 Datasheet(PDF) 1 Page - STMicroelectronics |
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BDY90 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 4 page  BDY90 HIGH CURRENT NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDY90 is a silicon epitaxial planar NPN power transistors in Jedec TO-3 metal case. They are intented for use in switching and linear applications in military and industrial equipment. INTERNAL SCHEMATIC DIAGRAM June 1997 ABSOLUTE MAXIMUM RATINGS Value VCBO Collector-base Voltage (IE = 0) 120 V VCEV Collector-emitter Voltage (VBE = -1.5V) 120 V VCEO Collector-emitter Voltage (IB = 0) 100 V VEBO Emitter-base Voltage (IC = 0) 6 V IC Collector Current 10 A ICM Collector Peak Current (repetitive) 15 A IB Base Current 2 A Ptot Total Dissipation at Tc ≤ 25 oC60 W Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC 1 2 TO-3 1/4 |
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