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MTSR3060P Datasheet(PDF) 2 Page - Shenzhen Luguang Electronic Technology Co., Ltd

Part # MTSR3060P
Description  Super-Fast Recovery Diodes 30A FRED Pt
PDF  4 Pages
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Manufacturer  LUGUANG [Shenzhen Luguang Electronic Technology Co., Ltd]
Direct Link  http://www.luguang.cn/web_en/index.html
Logo LUGUANG - Shenzhen Luguang Electronic Technology Co., Ltd

MTSR3060P Datasheet(HTML) 2 Page - Shenzhen Luguang Electronic Technology Co., Ltd

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■Electrical Characteristics
PARAMETER
SYMBOL
UNIT
TEST CONDITIONS
Min
Typ
Max
Instantaneous forward voltage drop per diode
V
FM
V
I
FM=30.0A @Tj=25℃
-
2.0
2.50
I
FM=30.0A @Tj=125℃
1.55
2.0
DC reverse current at
rated DC blocking voltage per diode
I
RRM1
uA
V
RM=VRRM
Tj=25
℃
-
-
5.0
I
RRM2
V
RM=VRRM
Tj=125
℃
-
-
200
Reverse Recovery Time
Trr
ns
IF=0.5A IRM=1A
IRR=0.25A Tj=25
℃
-
18
22
IF=30A
di/dt=-200A/us
VRM=400V
Peak recovery current
IRRM
A
Tj=25
℃
-
6.5
-
Tj=125
℃
-
16.5
-
Reverse recovery charge
Qrr
nC
Tj=25
℃
-
590
-
Tj=125
℃
-
2705
-
■Thermal Characteristics （Tj=25℃ Unless otherwise specified）
PARAMETER
SYMBOL
UNIT
MTSR3060P
Thermal
Resistance
Between junction and case
RθJ-C
℃/W
1.0
Between junction and Air
RθJ-A
℃/W
50
■ Characteristics(Typical)
12
5
10
20
50
100
100
150
200
250
8.3ms Single
Half Sine-Wave
JEDEC Method
300
50
FIG2:Surge Forward Current Capability
Number of Cycles
0
0
0
50
100
200
170
30.0
12.0
9.0
6.0
3.0
Case Temperature（℃）
FIG1:Io -Tc Curve
15.0
18.0
21.0
24.0
27.0
http://www.lgesemi.com
Revision:20240607-P2
mail:lge@lgesemi.com
MTSR3060P 
 
Super-Fast Recovery Diodes 30A FRED Pt



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