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BUF410A Datasheet(PDF) 2 Page - STMicroelectronics

Part # BUF410A
Description  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
PDF  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUF410A Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-ca se
Thermal Resistance Junction-Case
Max
1
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
ICER
Collector Cut -off
Current (RBE =100
Ω)
VCE =VCEV
VCE =VCEV
Tc =100
oC
0.2
1
mA
mA
ICEV
Collector Cut -off
Current (IB =0)
VCE =VCEV VBE =-1. 5 V
VCE =VCEV VBE =-1.5 V Tc =100
oC
0.2
1
mA
mA
IEBO
Emitter Cut- off Current
(IC =0)
VBE =5 V
1
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
IC = 200 mA
L = 25 mH
450
V
VEBO
Emitter Base Voltage
(IC =0)
IE =50 mA
7
V
VCE(sat)
∗ Collector-Emitter
Sat uration Voltage
IC =5 A
IB =0.5 A
IC =5 A
IB =0.5 A
Tc =100
oC
IC =10 A
IB =2 A
IC =10 A
IB =2 A
Tc =100
oC
0. 8
0. 5
2.8
2
V
V
V
V
VBE(sat)
∗ Base-Emitter
Sat uration Voltage
IC =5 A
IB =0.5 A
IC =5 A
IB =0.5 A
Tc =100
oC
IC =10 A
IB =2 A
IC =10 A
IB =2 A
Tc =100
oC
0. 9
1. 1
1.5
1.5
V
V
V
V
dic/dt
Rat e of rise on-stat e
Collector Current
VCC =300 V RC =0
tp=3
µs
IB1 = 0.75 A Tj =25
oC
IB1 = 0.75 A Tj =100
oC
IB1 =3 A
Tj =100
oC
45
100
60
A
/µs
A
/µs
A
/µs
VCE (3
µs) Collector-Emitter
Dynamic Voltage
VCC =300 V
RC =60
Ω
IB1 = 0.75 A
Tj =25
oC
IB1 = 0.75 A
Tj =100
oC
2. 1
8
V
V
VCE (5
µs) Collector-Emitter
Dynamic Voltage
VCC =300 V
RC =60
Ω
IB1 = 0.75 A
Tj =25
oC
IB1 = 0.75 A
Tj =100
oC
1. 1
4
V
V
ts
tf
tc
Storage Time
Fall Time
Cross Over T ime
IC =5 A
VCC =50 V
VBB =-5 V
RBB =1.2
Ω
Vclamp = 400 V
IB1 =0.5 A
L= 0.5mH
0. 8
0.05
0.08
µs
µs
µs
ts
tf
tc
Storage Time
Fall Time
Cross Over T ime
IC =5 A
VCC =50 V
VBB =-5 V
RBB =1.2
Ω
Vclamp = 400 V
IB1 =0.5 A
L= 0.5mH
Tj =100
oC
1.8
0.1
0.18
µs
µs
µs
VCEW
Maximum Collector
Emitter Volt age
wit hout Snubber
IC = 5 A
VCC =50 V
VBB =-5 V
RBB =1.2
Ω
Vclamp = 400 V
IB1 =0.5 A
L= 0.5mH
Tj =125
oC
500
V
ts
tf
tc
Storage Time
Fall Time
Cross Over T ime
IC =5 A
VCC =50 V
VBB =0
RBB =0.3
Ω
Vclamp = 400 V
IB1 =0.5 A
L= 0.5mH
1. 5
0.04
0.07
µs
µs
µs
BUF410A
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