BUH1015 datasheet(2/8 Pages) STMICROELECTRONICS

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THERMAL DATA

TO -218 ISOW AT T218

Rthj-ca se

Thermal Resistance Junction-case

Max

0.78

1.8

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collect or Cut-off

Current (VBE =0)

VCE =1500 V

Tj = 125

0.2

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5 V

100

µA

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC = 100 mA

700

VEBO

Emitt er-Base Voltage

(IC =0)

IE =10 mA

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =10 A

IB =2 A

1.5

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =10 A

IB =2 A

1.5

hFE

∗

DC Current G ain

IC =10 A

VCE =5 V

IC =10 A

VCE =5 V

Tj =100

RESI STIVE LO AD

St orage Time

Fall T ime

VCC =400 V

IC =10 A

IB1 =2 A

IB2 =-6 A

1.5

110

µs

INDUCTIVE LOAD

St orage Time

Fall T ime

IC = 10 A

f = 31250 Hz

IB1 =2 A

IB2 =-6 A

Vc eflybac k = 1200 sin







6





220

µs

INDUCTIVE LOAD

St orage Time

Fall T ime

IC =6 A

f = 64 KHz

IB1 =1 A

Vbeo ff =-2 V

Vc eflybac k = 1100 sin







6





3.7

200

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area For TO-218

Safe Operating Area For ISOWATT218

BUH1015/BUH1015HI

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