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LM4871MMX/NOPB Datasheet(PDF) 14 Page - Texas Instruments |
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LM4871MMX/NOPB Datasheet(HTML) 14 Page - Texas Instruments |
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14 / 30 page ![]() LM4871 SNAS002F – FEBRUARY 2000 – REVISED MAY 2013 www.ti.com Die/Wafer Characteristics Fabrication Attributes General Die Information Physical Die Identification LM4871C Bond Pad Opening Size (min) 102µm x 102µm Die Step C Bond Pad Metalization 0.5% COPPER_BAL. ALUMINUM Physical Attributes Passivation NITRIDE Wafer Diameter 150mm Back Side Metal BARE BACK Dise Size (Drawn) 1372µm x 1758µm Back Side Connection GND 54mils x 69mils Thickness 406µm Nominal Min Pitch 164µm Nominal Special Assembly Requirements: Note: Actual die size is rounded to the nearest micron. Die Bond Pad Coordinate Locations (C - Step) (Referenced to die center, coordinates in µm) NC = No Connection X/Y COORDINATES PAD SIZE SIGNAL NAME PAD# NUMBER X Y X Y SHUTDOWN 1 -559 541 102 x 102 BYPASS 2 -559 376 102 x 102 NC 3 -559 -45 102 x 210 INPUT + 4 -559 -248 102 x 102 INPUT - 5 -559 -486 102 x 102 GND 6 -476 -725 102 x 102 VOUT 1 7 -135 -598 102 x 210 GND 8 554 -686 102 x 102 VDD 9 554 -4 102 x 210 GND 10 554 568 102 x 102 VOUT 2 11 -135 598 102 x 210 GND 12 -473 752 102 x 102 14 Submit Documentation Feedback Copyright © 2000–2013, Texas Instruments Incorporated Product Folder Links: LM4871 |
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