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BUT100 Datasheet(PDF) 1 Page - STMicroelectronics |
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BUT100 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 4 page  BUT100 HIGH POWER NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED s HIGH RUGGEDNESS APPLICATION s MOTOR CONTROL s UNINTERRUPTABLE POWER SUPPLY DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. INTERNAL SCHEMATIC DIAGRAM April 1997 1 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEV Collector-Emitter Voltage (VBE = -1.5V) 200 V VCEO Collector-Emitter Voltage (IB = 0) 125 V VEBO Emitter-Base Voltage (IC = 0) 7 V IE Emitter Current 50 A IEM Emitter Peak Current 150 A IB Base Current 10 A IBM Base Peak Current 30 A Ptot Total Dissipation at Tc < 25 o C 300 W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC TO-3 (version " S ") 1/4 |
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Similar Description - BUT100 |
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