BUV46A datasheet(1/4 Pages) STMICROELECTRONICS

Part #	BUV46A

Description	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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BUV46

BUV46A

HIGH VOLTAGE NPN SILICON POWER TRANSISTORS

s

STMicroelectronics PREFERRED

SALESTYPES

s

NPN TRANSISTORS

s

HIGH VOLTAGE CAPABILITY

s

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

s

FAST SWITCHING SPEED

APPLICATIONS

s

GENERAL PURPOSE SWITCHING

s

SWITCH MODE POWER SUPPLIES

s

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

DESCRIPTION

The devices are silicon Multiepitaxial Mesa NPN

transistors in the Jedec TO-220 plastic package

intended

for

high

voltage,

fast

switching

applications.

®

INTERNAL SCHEMATIC DIAGRAM

January 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

BUV46

BUV46A

VCES

Collector-Emitter Voltage (VBE = 0)

850

1000

V

VCEX

Collector-Emitter Voltage (VBE = -2.5V)

850

1000

V

VCEO

Collector-Emitter Voltage (IB = 0)

400

450

V

VEBO

Emitter-Base Voltage (IC = 0)

7

V

IC

Collector Current

5

A

IB

Base Current

3

A

Ptot

Total Dissipation at Tc = 25

oC70

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

1

2

3

TO-220

1/4

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