Page <1>

V1.0

23/02/24

Single Bipolar Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

sg.element14.com/b/multicomp-pro

Absolute Maximum Ratings (Ta = 25°C Unless otherwise specified)

Parameter

Symbol

Value

Unit

Maximum Temperature storage Temperature

Tstg

-55 to +150

°C

Maximum Temperature Junction Temperature

Tj

150

Maximum Total power Dissipation

Ta = 25°C

Ptot

1

W

Tc = 25°C

10

Collector to Base Voltage

Ptot

40

V

Collector to Emitter Voltage

VCEO

30

Emitter to Base Voltage

VEBO

5

Collector Current (DC)

IC(DC)

3

A

Collector Current (Pulse)

IC(Pulse)1

7

Discription

•  The CSD882 is NPN Silicone Transistor suited for the Output Stage of 3

watt audio amplifier, Voltage regulator, DC-DC converter and relay driver.

Features:

1. Low Saturation Voltage:

VCE(sat) ≤0.5V (@ IC = 2A, IB = 0.2A)

2. Excellent hFE linearity and high hFE.

hFE: 60 to 400 (@ VCE = 2V, IC = 1A

3.  Less Cramping space required due to small and think package and reducing the trouble for attachment to 

a radiator no insulator bushing required

4. This product is available in AEC-Q101 Qualified and PPAP Capable also.

Note: For AEC-Q101 qualified products, please use suffix -AQ in the part number while ordering.

Parameter

Symbol

Test Condition

Min.

TYP.

MAX.

Unit

DC Current Gain

hFE 1

VCE = 2.0V, IC = 20mA 2

30

150

--

DC Current Gain

hFE 2

VCE = 2.0V, IC = 1.0A 2

60

160

400

Gain Bandwidth Product

fT

VCE = 5.0V, IC = 0.1A

--

90

--

MHz

Output Capacitance

Cob

VCB = 10V, IE = 0, f = MHz

45

pF

Collector Cutoff Current

ICBO

VCB = 30V, IE = 0,

--

1

μA

Emitter Cutoff Current

ICBO

VEB = 3.0V, IC = 0

Collector Saturation Voltage

VCE(sat)

IC = 2.0A, IB = 0.2A 2

0.3

0.5

V

Base Saturation Voltage

VBE(sat)

IC = 2.0A, IB = 0.2A 2

1

2

Electrical Characteristics at (Ta = 25°C Unless otherwise specified)