Symbol

Test Conditions

Min.

Typ.

Max.

Unit

°C

0.5

mA

°C

10

°C

0.55

V

0.85

STATIC CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

C

°C

220

pF

DYNAMIC CHARACTERISTICS

≤ 300µs δ < 2%.

Forward current flow in a Schottky rectifier is due to

majority carrier conduction. So reverse recovery is

not affected by stored charge as in conventional PN

junction diodes.

Nevertheless, when the device switches from for-

ward biased condition to reverse blocking state,

current is required to charge the depletion capaci-

tance of the diode.

This current depends only of diode capacitance and

external circuit impedance. Satisfactory circuit be-

haviour analysis may be performed assuming that

Schottky rectifier consists of an ideal diode in pa-

rallel with a variable capacitance equal to the junc-

tion capacitance (see fig. 5 page 4/4).

2/4

Fig.1 : Forward current versus forward

voltage at low level (typical values).

Fig.2 : Forward current versus forward

voltage at high level (typical values).

BYV 10-40