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VND830MSP-E Datasheet(PDF) 7 Page - STMicroelectronics |
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VND830MSP-E Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 28 page ![]() VND830MSP-E Electrical specifications Doc ID 10903 Rev 4 7/28 2.2 Thermal data EMAX Maximum switching energy (L = 0.18 mH; RL =0 Ω; Vbat=13.5 V; Tjstart = 150 °C; IL =9 A) 100 mJ Ptot Power dissipation at Tc = 25 °C 73.5 W Tj Junction operating temperature Internally limited °C Tc Case operating temperature -40 to 150 °C TSTG Storage temperature -55 to 150 °C Table 3. Absolute maximum ratings (continued) Symbol Parameter Value Unit Table 4. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 1.7 °C/W Rthj-amb Thermal resistance junction-ambient 51.7(1) 1. When mounted on a standard single sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick). Horizontal mounting and no artificial air flow. 37(2) 2. When mounted on a standard single sided FR-4 board with 6 cm2 of Cu (at least 35 µm thick). Horizontal mounting and no artificial air flow. °C/W |
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