L9679P datasheet(254/279 Pages) STMICROELECTRONICS

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Electrical characteristics

L9679P

254/279

DS11627 Rev 7

18.17.3 High/low side FET test

All electrical characteristics are valid for the following conditions unless otherwise noted:

-40 °C  Ta  +95 °C, VINGOOD0(max)  VIN  35 V, 6 V  SSxy  35 V, 7 V  SYNCBOOST 

35 V.

18.17.4 Deployment timer test

All electrical characteristics are valid for the following conditions unless otherwise noted:

-40 °C  Ta  +95 °C, VINGOOD0  VIN  35 V.

Table 60. High/low side FET test

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IHS_FET_TH

Detection threshold

high side FET test

-12%

1.8

+12%

ILS_FET_TH

Detection threshold

low side FET test

SYS_CTL(PD&VRCM_SEL) = 0 -15.5% 450 +15.5% µA

3 ILS_FET_TH_HIGH

SYS_CTL(PD&VRCM_SEL) = 1

-15%

+15%

EFET_TEST

Energy transferred to

squib/pyroswitch during

HS/LS FET tests

Design Info

170

µJ

TDRIVER_DIS

Driver Disable time

Guaranteed by design

1.5

µs

6 TTOT_FETTEST_A

CTIVE

Total FET test activation

time in case of no fault

condition

Guaranteed by design

µs

TFETTIMEOUT HS/LS FET test timeout -

190

200

210

µs

TFLT_LKGB_FT

Deglitch filter time

during FET test on

IHS_FET_TH / ILS_FET_TH

current thresholds

0.8

1.2

µs

ILIM_HS_FET

HS FET current in HS

driver diagnostics

Not tested because of item # 1 in

errata sheet

SGxyOPEN

Squib/pyroswitch open

ground detection

GNDSUBx as ground reference

300

450

600

TFLT_SGOPEN

Squib/pyroswitch open

ground detection filter

time

µs

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