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L9680 Datasheet(PDF) 262 Page - STMicroelectronics |
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L9680 Datasheet(HTML) 262 Page - STMicroelectronics |
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262 / 286 page ![]() Electrical characteristics L9680 262/286 DS11615 Rev 7 17.17.3 High/low-side FET test All electrical characteristics are valid for the following conditions unless otherwise noted: -40 °C Ta +95 °C, VINGOOD0(max) VIN 35 V, 6 V SSxy 35 V, 7 V SYNCBOOST 35 V. 13 RSQ_LOW_TH Detection threshold for “resistance too low” Design Info 200 - 500 14a IRSQ_LOW_TH Equivalent to resistance range -25 °C ≤ Tj ≤ +150 °C guaranteed by design/characterization -12% 6 +12% mA 14b -40 °C ≤ Tj ≤ +150 °C -17% 6 +12% mA 15 TFLT_RLOW “Resistance too low” deglitch filter time - 12 15 18 µs 16 RSQ_HIGH Detection Threshold for “resistance too high” Design Info 2 - 5 kΩ 17 IRSQ_HIGH Equivalent to resistance range -17% 700 +17% µA 18 TFLT_RHIGH “Resistance too high” deglitch filter time - 12 15 18 µs 19 Tdelay_STG_sele ction Time needed to change the VRCM STG thresholds (450 µA-to-2 mA or 2 mA- to-450 µA) guaranteed by design - - 2 µs Table 59. Squib/pyroswitch Leakage Test (VRCM) (continued) No Symbol Parameter Conditions Min Typ Max Unit Table 60. High/low-side FET test No Symbol Parameter Conditions Min Typ Max Unit 1 IHS_FET_TH Detection threshold high-side FET test - -12% 1.8 +12% mA 2 ILS_FET_TH Detection threshold low-side FET test SYS_CTL(PD&VRCM_SEL) = 0 -15.5% 450 +15.5% µA 3 ILS_FET_TH_HIGH SYS_CTL(PD&VRCM_SEL) = 1 -15% 2 +15% mA 4 EFET_TEST Energy transferred to squib/pyroswitch during HS/LS FET tests Design Info - - 170 µJ 5 TDRIVER_DIS Driver Disable time Guaranteed by design - - 1.5 µs 6 TTOT_FETTEST_A CTIVE Total FET test activation time in case of no fault condition Guaranteed by design - - 4 µs 7 TFETTIMEOUT HS/LS FET test timeout - 190 200 210 µs |
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