VN7007AH-E datasheet(21/40 Pages) STMICROELECTRONICS

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VN7007AH-E

Protections

3.1

Power limitation

The basic working principle of this protection consists of an indirect measurement of the

junction temperature swing

ΔTj through the direct measurement of the spatial temperature

gradient on the device surface in order to automatically shut off the output MOSFET as soon

ΔTj exceeds the safety level of ΔTj_SD. The protection prevents fast thermal transient

effects and, consequently, reduces thermo-mechanical fatigue.

3.2

Thermal shutdown

In case the junction temperature of the device exceeds the maximum allowed threshold

(typically 175°C), it automatically switches off and the diagnostic indication is triggered. The

device switches on again as soon as its junction temperature drops to TR (see Table 9).

3.3

Current limitation

The device is equipped with an output current limiter in order to protect the silicon as well as

the other components of the system (e.g. bonding wires, wiring harness, connectors, loads,

etc.) from excessive current flow. Consequently, in case of short circuit, overload or during

load power-up, the output current is clamped to a safety level, ILIMH, by operating the output

power MOSFET in the active region.

3.4

Negative voltage clamp

In case the device drives inductive load, the output voltage reaches negative value during

turn off. A negative voltage clamp structure limits the maximum negative voltage to a certain

value, VDEMAG (see Table 9), allowing the inductor energy to be dissipated without

damaging the device.

Obsolete

Product(s)

- Obsolete

Product(s)

VN7007AH-E Datasheet(PDF) 21 Page - STMicroelectronics