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L5959 Datasheet(PDF) 11 Page - STMicroelectronics |
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L5959 Datasheet(HTML) 11 Page - STMicroelectronics |
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11 / 19 page ![]() L5959 Electrical specification 11/19 ISTG HSD1 short to ground current VHSD1=0V 240 300 400 mA ISTB HSD1 short to VBAT current VHSD1=VBAT 2 10 mA I Q(VBAT) HSD1 bias current change IHSD1 = 0 to 100 mA; Measure change in VBAT current 0.15 10 mA TSEN HSD1 thermal shutdown IHSD1 = 500 µA; Increase Ta until HSD1 disabled 150 190 °C tdon Turn-on delay; IHSD1= 10mA 10 50 110 µs tdoff Turn-off delay, IHSD1= 100 mA 70 110 µs tr Rise time 10% to 90%, IHSD1 = 10mA 35 75 µs HIGH SIDE DRIVER2 VdropSW Drop voltage HDS2 Idc = 300mA 0.2 0.6 V Idc =450mA, t=5S 0.3 1.2 V ISTG HSD2 short to ground current VHSD2=0V 0.55 0.75 1 A ISTB HSD2 short to VBAT current VHSD2=VBAT 3.5 10 mA I Q(VBAT) HSD2 bias current change IHSD2 = 0 to 300 mA; Measure change in VBAT current 0.15 10 mA TSEN HSD2 thermal shutdown IHSD2 = 500 µA; Increase Ta until HSD2 disabled 150 190 °C tdon Turn-on delay; IHSD2= 10mA 10 45 110 µs tdoff Turn-off delay, IHSD2= 300 mA 70 110 µs tr Rise time 10% to 90%, IHSD2 = 10mA 30 75 µs RST (open collector output) VTH VSTBY reset threshold Force VSTBY low until RST* asserted 0.93 * VSTBY 0.95 * VSTBY 0.97 * VSTBY V VHYS Hysteresis of reset on rising VSTBY 10 50 200 mV trRST Rise time 10% to 90%, RRST= 47 k, CRST = 50 pF 20 30 µs tfRST Fall time 90% to 10%,RRST= 47 k, CRST = 50 pF 300 1000 ns VIH_RSTDLY RSTDLY input voltage threshold Verify RST is de asserted 2.5 2.75 3.5 V ISRC RSTDLY current RSTDLY = 0 VDC 6 8.5 12 µA Table 5. Electrical characteristics (continued) (VS = 14.4V; Tamb = 25°C; unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit |
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