Nexperia

PESD4V0Z1BCSF

Extremely low capacitance bidirectional ESD protection diode

5. Pinning information

Table 2. Pinning information

Pin

Symbol Description

Simplified outline

Graphic symbol

1

K1

cathode (diode 1)

2

K2

cathode (diode 2)

Transparent

top view

2

1

DSN0603-2 (SOD962)

sym045

K2

K1

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

PESD4V0Z1BCSF

DSN0603-2

silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch;

0.6 x 0.3 x 0.3 mm body

SOD962

7. Marking

Table 4. Marking codes

Type number

Marking code

PESD4V0Z1BCSF

C4

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRWM

reverse standoff voltage

-

4

V

IPPM

rated peak pulse current tp = 8/20 µs

[1] [2]

-

15

A

Tamb

ambient temperature

-40

125

°C

Tstg

storage temperature

-65

150

°C

ESD maximum ratings

IEC 61000-4-2; contact discharge

[3]

-30

30

kV

VESD

electrostatic discharge

voltage

IEC 61000-4-2; air discharge

[3]

-30

30

kV

[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[2] In positive and negative direction.

[3] Device stressed with ten non-repetitive ESD pulses.

PESD4V0Z1BCSF

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2018. All rights reserved

Product data sheet

2 July 2018

2 / 16