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EMIF02-600FU7 Datasheet(PDF) 2 Page - STMicroelectronics

Part # EMIF02-600FU7
Description  10-BIT WIDE EMI FILTER INCUDINGESD PROTECTION
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

EMIF02-600FU7 Datasheet(HTML) 2 Page - STMicroelectronics

  EMIF02-600FU7 Datasheet HTML 1Page - STMicroelectronics EMIF02-600FU7 Datasheet HTML 2Page - STMicroelectronics EMIF02-600FU7 Datasheet HTML 3Page - STMicroelectronics EMIF02-600FU7 Datasheet HTML 4Page - STMicroelectronics EMIF02-600FU7 Datasheet HTML 5Page - STMicroelectronics EMIF02-600FU7 Datasheet HTML 6Page - STMicroelectronics EMIF02-600FU7 Datasheet HTML 7Page - STMicroelectronics EMIF02-600FU7 Datasheet HTML 8Page - STMicroelectronics EMIF02-600FU7 Datasheet HTML 9Page - STMicroelectronics  
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Symbol
Parameter and test conditions
Value
Unit
VPP
ESD discharge IEC1000-4-2, air discharge
ESD discharge IEC1000-4-2, contact discharge
16
9
kV
Tj
Junction temperature
150
°C
Top
Operatingtemperature range
-40 to + 85
°C
Tstg
Storage temperature range
-55 to +150
°C
TL
Lead solder temperature (10 second duration)
260
°C
ABSOLUTE MAXIMUM RATINGS (Tamb =25
°C)
Symbol
Test conditions
Min.
Typ.
Max.
Unit
VBR
IR =1 mA
6
7
8
V
IRM
VRM =3V
1
µA
RI/O
Serial resistance between Input and Output
480
600
720
Ω
Rd
Ipp =10 A, tp = 2.5
µs (see note 1)
0.55
Ω
Note 1 : to calculate the ESD residual voltage, please refer to the paragraph ”ESD PROTECT ION” on pages 4 & 5
Symbol
Parameter
VBR
Breakdown voltage
IRM
Leakage current @ VRM
VRM
Stand-off voltage
VCL
Clamping voltage
Rd
Dynamic impedance
IPP
Peak pulse current
RI/O
Serial resistance between Input
and Output
ELECTRICAL CHARACTERISTICS (Tamb =25
°C)
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0.5
1.0
2.0
5.0
10.0
20.0
IR[VR] / IR[VR=3V]
VR (V)
Fig.1 : Relative variation of leakage current versus
reverse voltage(Typical values)
EMIF02-600FU7
2/9



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