Characteristics

STPS15H100C

2/8

DocID8562 Rev 7

1

Characteristics

When the diodes 1 and 2 are used simultaneously:

 T

j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

To evaluate the conduction losses use the following equation:

P = 0.58 x IF(AV) + 0.012 IF

2

(RMS)

Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(RMS)

Forward rms current

10

A

IF(AV)

Average forward current,

δ = 0.5, square

wave

Tc = 135 °C

(1)

Per diode

7.5

A

Per device

15

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

75

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

475

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(2)

175

°C

1.

Value based on Rth(j-c) max (per diode)

2.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

---------------

1

Rth j

a

–



--------------------------



Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

4

°C/W

Total

2.4

Rth(c)

Coupling

0.7

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IR

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

3µA

Tj = 125 °C

1.3

4

mA

VF

(2)

Forward voltage drop

Tj = 25 °C

IF = 7.5 A

0.8

V

Tj = 125 °C

IF = 7.5 A

0.62

0.67

Tj = 25 °C

IF = 12 A

0.85

Tj = 125 °C

IF = 12 A

0.68

0.73

Tj = 25 °C

IF = 15 A

0.89

Tj = 125 °C

IF = 15 A

0.71

0.76

1.

tp = 5 ms,  < 2%

2.

tp = 380 µs,  < 2%