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IS25LE512M-RLLA3:P-TY Datasheet(PDF) 172 Page - Integrated Silicon Solution, Inc

Part # IS25LE512M-RLLA3:P-TY
Description  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RLLA3:P-TY Datasheet(HTML) 172 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
172
Rev. A6
06/16/2025
8.69 WRITE ECC REGISTER OPERATION (WRECC, B5h)
Before the Write ECC Register (WRECC) command can be accepted by the device, a Write Enable (WREN)
command must be issued and decoded by the device. After the Write Enable (WREN) command has been
decoded successfully, the device will set the Write Enable Latch (WEL) to enable the WRECC operation.
The WRECC command (B5h) is entered by shifting the instruction and data byte on SI.
CE# must be driven to the logic high state after the eighth (8th) bit of data has been latched. If not, the WRECC
command is not executed. As soon as CE# is driven to the logic high state, the WRECC operation is initiated with
no delays.
Figure 8.150 WRECC Sequence In SPI Mode
Instruction = B5h
CE #
SCK
SI
SO
Data In
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Mode 3
Mode 0
7
3
2
1
0
6
5
4
High Impedence
Figure 8.151 WRECC Sequence In QPI Mode
B5h
0
1
Mode 3
Mode 0
2
3
7:4
3:0
CE#
SCK
IO[3:0]
Data In



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