IS25LE512M-RLLA3:P-TY datasheet(176/189 Pages) ISSI

176 / 189 page

IS25LE512M

IS25WE512M

Integrated Silicon Solution, Inc.- www.issi.com

176

Rev. A6

06/16/2025

9.3 DC CHARACTERISTICS

(Under operating range)

Symbol

Parameter

Condition

Min

Typ(2)

Max

Units

ICC1

VCC Active Read current

(3)

NORD

FRD Single at 133MHz

FRD Dual at 133MHz

FRD Quad at 133MHz

FRD Single at 104MHz

FRD Dual at 104MHz

FRD Quad at 104MHz

FRD Single DTR at 66MHz

FRD Dual DTR at 66MHz

FRD Quad DTR at 66MHz

ICC2

VCC Program Current

CE# = VCC

85°C

105°C

125°C

ICC3

VCC WRSR Current

CE# = VCC

85°C

105°C

125°C

ICC4

VCC Erase Current

(SER/4SER/BER32/4BER32/

BER64/4BER64)

CE# = VCC

85°C

105°C

125°C

ICC5

VCC Erase Current (CE)

CE# = VCC

85°C

105°C

125°C

ISB1

VCC Standby

Current CMOS

IS25LE

CE# = VCC,

VIN = GND or VCC

(4)

85°C

90 (6)

µA

105°C

140 (6)

125°C

260

IS25WE

85°C

90(6)

105°C

140 (6)

125°C

260

ISB2

Deep power down

current

IS25LE

CE# = VCC,

VIN = GND or VCC

(4)

85°C

35 (6)

µA

105°C

50 (6)

125°C

IS25WE

85°C

35 (6)

105°C

50 (6)

125°C

ILI

Input Leakage Current

VIN = 0V to VCC

±25)

µA

ILO

Output Leakage Current

VIN = 0V to VCC

±2(5)

µA

VIL(1)

Input Low Voltage

-0.5

0.3VCC

VIH(1)

Input High Voltage

0.7VCC

VCC + 0.3

VOL

Output Low Voltage

IOL = 100 µA

0.2

VOH

Output High Voltage

IOH = -100 µA

VCC - 0.2

IS25LE512M-RLLA3:P-TY Datasheet(PDF) 176 Page - Integrated Silicon Solution, Inc

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