ELECTRICAL CHARACTERISTICS

PTH12060W/L

www.ti.com .................................................................................................................................................... SLTS217H – MAY 2003 – REVISED DECEMBER 2008

TA = 25C; VI = 12 V; VO = 3.3 V; CI = 560 µF, CO = 0 µF, and IO = IOmax (unless otherwise stated)

PTH12060W

UNIT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

TA = 60°C, 200 LFM airflow

0

10

(1)

A

IO

Output current

Over

ΔVadj range

TA = 25°C, natural convection

10

(1)

A

VI

Input voltage range

Over IO range

10.8

13.2

V

VO tol

Set-point voltage tolerance

±2

(2)

%VO

ΔRegtemp

Temperature variation

–40°C < TA < 85°C

±0.5

%VO

ΔRegline

Line regulation

Over Vin range

±10

mV

ΔRegload

Load regulation

Over Io range

±12

mV

ΔRegtot

Total output variation

Includes set-point, line, load, –40°C

≤ TA ≤ 85°C

±3

%VO

ΔVadj

Output voltage adjust range

Over Vin range

1.2

5.5

V

RSET = 280 Ω, VO = 5.0 V

94%

RSET = 2.0 kΩ, VO = 3.3 V

92%

RSET = 4.32 kΩ, VO = 2.5 V

90%

η

Efficiency

IO = 8 A

RSET = 11.5 kΩ, VO = 1.8 V

87%

RSET = 24.3 kΩ, VO = 1.5 V

85%

RSET = open circuit, VO = 1.2 V

83%

VO ≤ 2.5 V

25

(3)

mVPP

20-MHz bandwidth,

VO ripple (peak-to-peak)

with CO2 = 10 µF ceramic

VO > 2.5 V

1

(3)

%VO

IO trip

Overcurrent threshold

Reset, followed by auto-recovery

20

A

ttr

1 A/µs load step, 50 to

Recovery time

70

µS

Transient response

100% Iomax,

Vo over/undershoot

100

mV

ΔVtr

CO1 = 330 µF

VOadj

Margin up/down adjust

±5%

IILmargin

Margin input current (pins 9/10)

Pin to GND

–8

(4)

µA

IILtrack

Track input current (pin 8)

Pin to GND

–0.11

(5)

mA

dVtrack/dt

Track slew rate capability

CO ≤ CO (max)

1

V/ms

VI increasing

9.5

10.4

UVLO

Undervoltage lockout

V

VI decreasing

8.8

9

VIH

Input high voltage, Referenced to GND

Open

(5)

V

VIL

Inhibit Control (pin 3)

Input low voltage, Referenced to GND

–0.2

0.5

IIL

Input low current, Pin 3 to GND

0.24

mA

II

Input standby current

Inhibit (pin 3) to GND, Track (pin 8) open

10

mA

f s

Switching frequency

Over VI and IO ranges

300

350

400

kHz

CI

External input capacitance

560

(6)

µF

Nonceramic

0

330

(7)

5500

(8)

Capacitance value

µF

CO

External output capacitance

Ceramic

0

300

Equivalent series resistance (nonceramic)

4

(9)

m

Ω

6.4

MTBF

Reliability

Per Bellcore TR-332, 50% stress, TA = 40°C, ground benign

10

6 Hr

(1)

See SOA curves or consult factory for appropriate derating.

(2)

The set-point voltage tolerance is affected by the tolerance and stability of RSET. The stated limit is unconditionally met if RSET has a

tolerance of 1% with 100 ppm/°C or better temperature stability.

(3)

The peak-to-peak output ripple voltage is measured with an external 10-µF ceramic capacitor. See the standard application schematic.

(4)

A small, low leakage (<100 nA) MOSFET is recommended to control this pin. The open-circuit voltage is less than 1 Vdc.

(5)

This control pin has an internal pull-up to the input voltage VI. If it is left open-circuit, the module operates when input power is applied.

A small, low-leakage (<100 nA) MOSFET or open-drain/collector voltage supervisor IC is recommended for control. Do not place an

external pull-up on this pin. For further information, see the related application information section.

(6)

A 560 µF input capacitor are required for proper operation. The electrolytic capacitor must be rated for a minimum of 1050 mA rms of

ripple current.

(7)

An external output capacitor is not required for basic operation. Adding 330 µF of distributed capacitance at the load improves the

transient response.

(8)

This is the calculated maximum. The minimum ESR limitation oftens result in a lower value. When controlling the Track pin using a

voltage supervisor, CO(max) is reduced to 2200 µF. See the application notes for further guidance.

(9)

This is the typical ESR for all the electrolytic (nonceramic) output capacitance. Use 7 m

Ω as the minimum when using max-ESR values

to calculate.

Copyright © 2003–2008, Texas Instruments Incorporated

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