1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, anode terminals short

circuited)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

50

V

IF(RMS)

Forward rms current

45

A

IF(AV)

Average forward current, δ = 0.5 square wave

TC = 115 °C

20

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

180

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

PowerFlat™ 5x6

+150

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameter

Symbol

Parameter

Max. value

Unit

Rth(j-c)

Junction to case

2.6

°C/W

For more information, please refer to the following application note :

•

AN5046 : Printed circuit board assembly recommendations for STMicroelectronics PowerFLAT™ packages

Table 3. Static electrical characteristics (anode terminals short circuited)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

800

µA

Tj = 125 °C

-

30

60

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

-

0.37

V

Tj = 125 °C

-

0.33

Tj = 25 °C

IF = 20 A

-

0.45

0.51

Tj = 125 °C

-

0.44

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.25 x IF(AV) + 0.011 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

FERD20U50

Characteristics

DS10223 - Rev 5

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