A

K

Product label

Features

•

AEC-Q101 qualified

•

No reverse recovery charge in application current range

•

Switching behavior independent of temperature

•

High forward surge capability

•

PPAP capable

•

ECOPACK2 compliant component

•

VRRM guaranteed from -40 to 175 °C

•

Power efficient product

Applications

•

Switch mode power supply

•

PFC

•

"DC/DC" converters

•

LLC topologies

•

Boost diode

Description

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of a

Schottky diode structure with a 650 V rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC2H065-Y SiC diode will

boost performance in hard switching conditions.

Product status

STPSC2H065-Y

Product summary

Symbol

Value

IF(AV)

2 A

VRRM

650 V

Tj(max.)

175 °C

VF(typ.)

1.38 V

Automotive 650 V, 2 A high surge silicon carbide power Schottky diode

STPSC2H065-Y

Datasheet

DS12990 - Rev 1 - April 2019

For further information contact your local STMicroelectronics sales office.

www.st.com