Characteristics

STPS20120C

2/14

DocID11212 Rev 4

1

Characteristics

When the two diodes 1 and 2 are used simultaneously:

Tj(diode1) = P(diode1) x Rth(j-c)(per diode) + P(diode2) x Rth(c)

To evaluate the conduction losses, use the following equation:

P = 0.62 x IF(AV) + 0.012 x IF2(RMS)

Table 2. Absolute ratings (limiting values per diode at Tamb = 25 °C unless otherwise stated)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

120

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward current,

 = 0.5, square wave

Tc = 150 °C

per diode

10

A

Tc = 145 °C

per device

20

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

150

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

330

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

175

°C

1.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

<

1

Rth(j-a)

Table 3. Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-c) Junction to case

per diode

3

°C/W

total

1.8

Rth(c)

Coupling

0.6

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-10

µA

Tj = 125 °C

-

1.5

5

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 2.5 A

-0.70

V

Tj = 125 °C

-

0.54

0.58

Tj = 25 °C

IF = 10 A

-0.92

Tj = 125 °C

-

0.70

0.74

Tj = 25 °C

IF = 20 A

-1.02

Tj = 125 °C

-

0.81

0.86

1. Pulse test: tp = 5 ms,  < 2%

2. Pulse test: tp = 380 µs,  < 2%