1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

120

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward current , δ = 0.5 square wave

Tc = 130 °C

20

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

200

A

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

619

W

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature (1)

175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

2.2

°C/W

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

20

µA

Tj = 125 °C

-

3

10

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 5 A

-

0.70

V

Tj = 125 °C

-

0.54

0.58

Tj = 25 °C

IF = 10 A

-

0.80

Tj = 125 °C

-

0.62

0.66

Tj = 25 °C

IF = 20 A

-

0.93

Tj = 125 °C

-

0.72

0.76

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.56 x IF(AV) + 0.010 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses :

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPS20120D

Characteristics

DS4232 - Rev 2

page 2/9