Features

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AEC-Q101 qualified and PPAP capable

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None or negligible reverse recovery charge in application current range

•

Switching behaviour independent of temperature

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High forward surge capability

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Operating Tj from -55 °C to +175 °C

•

ECOPACK2 compliant component

Applications

•

Solar inverter

•

Air conditioning equipment

•

UPS power supply

•

Telecom / Server power equipment

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OBC (On board battery chargers)

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EV Charging station

Description

The SiC diode STPSC12G065-Y, available in TO-220AC, is an ultrahigh performance

power Schottky rectifier. It is manufactured using a silicon carbide substrate. The

wide band-gap material allows the design of a low VF Schottky diode structure with a

650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal capacitive turn-off behavior is

independent of temperature.

Based on latest technology optimization, this diode has an improved forward surge

current capability, making it ideal for use in PFC, where this ST SiC diode boosts the

performance in hard switching conditions. Using the latest design improvement of the

“G” series of ST SiC diodes, as well as implemented tests in production, this diode is

becoming the reference point in the combination of efficiency and application

robustness to the application design.

A

K

A

K

K

TO-220AC

Product label

Product status link

STPSC12G065-Y

Product summary

IF(AV)

12 A

VRRM

650 V

Tj (max.)

175 °C

VF (typ.)

1.30 V

Automotive 650 V, 12 A high surge silicon carbide power Schottky diode

STPSC12G065-Y

Datasheet

DS15043 - Rev 2 - October 2025

For further information, contact your local STMicroelectronics sales office.

www.st.com