Description

The

protects sensitive semiconductor components from

damage or upset due to electrostatic discharge (ESD) and other voltage

induced transient events.

They feature large cross-sectional area junctions

for conducting high transient

currents,

offer desirable electrical

characteristics for board level protection,

such as fast response time, low

operating voltage.

Feature

300W peak pulse power per line (tP = 8/20μs)

DFN1006-2L package

Replacement for MLV(0402)

Bidirectional configurations

Response time is typically < 1ns

Low clamping voltage

RoHS compliant

Transient protection for data lines to

IEC61000-4-2(ESD) ±30KV(air), ±30KV(contact);

IEC61000-4-4 (EFT) 40A (5/50ns)

Applications

Cellular phones

Portable devices

Digital cameras

Power supplies

DFN1006-2L

Mechanical Characteristics

Mounting position: Any

Qualified max reflow temperature:260℃

Device meets MSL 1 requirements

DFN1006-2L without plating

Pin 2

Pin 1

SXESDHC2FD7VB

Transient Voltage Suppressors for ESD Protection

SXESDHC2FD7VB

1

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