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STTH602CBY-TR Datasheet(PDF) 4 Page - STMicroelectronics |
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STTH602CBY-TR Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 9 page ![]() Characteristics STTH602C-Y 4/9 DocID023250 Rev 2 1.1 Characteristics (curves) Figure 1: Peak current versus duty cycle (per diode) Figure 2: Forward voltage drop versus forward current (typical values, per diode) Figure 3: Forward voltage drop versus forward current (maximum values, per diode) Figure 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode) Figure 5: Junction capacitance versus reverse applied voltage (typical values, per diode) Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode) 0 20 40 60 80 100 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 T tp IM T δ = tp/T tp IM P = 5 W P = 5 W P = 3 W P = 3 W P = 10 W P = 10 W δ IM(A) 0.1 1.0 1.E-03 1.E-02 1.E-01 1.E+00 Single pulse - tp(s) Zth(j-c)/Rth(j-c) 1 10 100 1 10 100 1000 C(pF) F = 1 MHz V osc = 30 mVRM S T j = 25 °C VR(V) |
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