PN8016

Chipown

www.chipown.com

© 2018 Wuxi Chipown Microelectronics Limited

Rev.1809

Sept.-2018

3 / 11

Absolute Maximum Ratings

Supply voltage Pin VDD……………….………-0.3~40V

High-Voltage Pin, SW…………….…….…..…. -0.3~750V

FB Pin………………..….…………………………-0.3~7V

Operating Junction Temperature….….....….….-40~150℃

Storage Temperature Range……………...…. ….-55~150℃

Lead Temperature (Soldering, 10Secs)……………...260℃

Package Thermal Resistance RθJC（SOP-7）…...….80℃/W

HBM ESD Protection (1) ………….………..…...….

±4kV

ESD voltage Protection (2)………....…………………...8kV

Pulse Drain Current（Tpulse=100us）………….…..…..…2A

Note：1. Test standard: ESDA/JEDEC JDS-001-2014.

2. Air discharge to pins of PN8016 with ESD Generator, Enterprise internal standards, for reference only.

Electrical Characteristics

(TA = 25°C, V

DD = 15 V, unless otherwise specified)

PARAMETER

SYMBOL

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Power Section

Drain Break-down voltage

BVDSS

ISW =250uA

750

820

V

Off-state drain current

IOFF

Vsw =500V

100

μA

Drain-source

on

state

resistance

RDS(on)

ISW = 400mA, T

J

=25°C

10

Ω

Start up threshold

VSW_START

VDD=VDDon – 1V

30

V

Supply Voltage Section

VDD start up threshold

VDDon

12

13.5

15

V

VDD under voltage

shutdown threshold

VDDoff

10

11

12

V

VDD voltage Hysteresis

VDDhys

2.5

V

VDD clamp voltage

VDDclamp

16

20

23

V

Supply Current Section

VDD charge current

IDDch

VDD=9V

-2.5

mA

Operating supply current

IDD0

VFB=2V,VDD=15V

150

330

450

uA

Off-state current

IDD1

VFB=2V,VDD=11V

80

120

150

uA

Operating supply current,

with protection tripping

IDDFAULT

VDD＝15V

150

uA

Current Sense Section

Drain current limit

Ilimit

490

540

590

mA

Leading edge blanking

time

TLEB

300

ns

Feedback Input Section

Minimum turn OFF time

Toffmin

15

18

21

us

Minimum turn ON time

Tonmax

10

13

16

us

MOSFET feedback

turn-on Reference Voltage

VREF

2.45

2.5

2.55

V