STM32F101RBT6 datasheet(94/101 Pages) STMICROELECTRONICS

94 / 101 page

Revision history

STM32F101x8, STM32F101xB

94/101

DocID13586 Rev 17

Revision history

Table 53. Document revision history

Date

Revision

Changes

06-Jun-2007

First draft.

20-Jul-07

IDD values modified in Table 11: Maximum current consumption in Run

and Sleep modes (TA = 85 °C).



VBAT range modified in Power supply schemes.

VREF+ min value, tSTAB, tlat and fTRIG added to Table 41: ADC

characteristics. Table 37: TIMx characteristics modified.

Note 6 modified and Note 8, Note 5 and Note 7 added below Table 4:

Medium-density STM32F101xx pin definitions.

Figure 20: Low-speed external clock source AC timing diagram,

Figure 11: Power supply scheme, Figure 28: Recommended NRST pin

protection and Figure 29: I2C bus AC waveforms and measurement

circuit(1) modified.



Sample size modified and machine model removed in Electrostatic

discharge (ESD).



Number of parts modified and standard reference updated in Static latch-

up. 25 °C and 85 °C conditions removed and class name modified in

Table 31: Electrical sensitivities.

tSU(LSE) changed to tSU(LSE) in Table 21: HSE 4-16 MHz oscillator

characteristics.

In Table 27: Flash memory characteristics, typical endurance added, data

retention for TA = 25 °C removed and data retention for TA = 85 °C added.

Note removed below Table 8: General operating conditions.

VBG changed to VREFINT in Table 11: Embedded internal reference

voltage. IDD max values added to Table 11: Maximum current

consumption in Run and Sleep modes (TA = 85 °C).



IDD(HSI) max value added to Table 23: HSI oscillator characteristics.

RPU and RPD min and max values added to Table 33: I/O static

characteristics. RPU min and max values added to Table 36: NRST pin

characteristics (two notes removed).

Datasheet title corrected. USB characteristics section removed.



Features on page 1 list optimized. Small text changes.

STM32F101RBT6 Datasheet(PDF) 94 Page - STMicroelectronics

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