Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2007 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

Mimix Broadband

’s 17.0-25.0 GHz GaAs packaged receiver has a

noise figure of 2.5 dB and 20.0 dB image rejection across the band.

This device is a two stage balanced LNA followed by an image reject

sub-harmonic anti-parallel diode mixer and includes an integrated

LO buffer amplifer. The image reject mixer eliminates the need for a

bandpass filter after the LNA to remove thermal noise at the image

frequency. The use of a sub-harmonic mixer makes the provision of

the LO easier than for fundamental mixers at these frequencies. I and

Q mixer outputs are provided and an external 90 degree hybrid is

required to select the desired sideband. This device uses Mimix

Broadband

’s 0.15 µm GaAs PHEMT device model technology, and is

based upon electron beam lithography to ensure high repeatability

and uniformity. The device comes in a 7x7 mm QFN Surface Mount

Laminate Package offering excellent RF and thermal properties and

is RoHS compliant. This device is well suited for Millimeter-wave

Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

17.0-25.0 GHz GaAs Receiver

QFN, 7x7 mm

Page 1 of 8

Sub-harmonic Receiver

Integrated LNA, LO Buffer, Image Reject Mixer

7x7 mm, QFN

+2.0 dBm LO Drive Level

2.5 dB Noise Figure

20.0 dB Image Rejection

100% On-Wafer RF, DC and Noise Figure Testing

Features

General Description

Absolute Maximum Ratings

Supply Voltage (Vd)

Supply Current (Id1,Id2)

Gate Bias Voltage (Vg)

Input Power (RF Pin)

Storage Temperature (Tstg)

Operating Temperature (Ta)

Channel Temperature (Tch)

+4.5 VDC

180, 165 mA

+0.3 VDC

0.0 dBm

-55 to MTTF Table

MTTF Table

(3) Channel temperature affects a device's MTTF. It is

recommended to keep channel temperature as low as

possible for maximum life.

3

3

Units

GHz

GHz

GHz

GHz

dB

dB

dBm

dBc

dB

dB

dBm

VDC

VDC

VDC

mA

mA

Min.

17.0

17.0

8.0

DC

-

-

-

-

-

40.0

-

-

-

-1.2

-

-

Typ.

-

-

-

-

15.0

8.0

+2.0

20.0

2.5

-

-7.0

+4.0

+4.0

-0.3

130

116

Max.

25.0

25.0

14.0

3.0

-

-

-

-

-

-

-

+4.5

+4.5

+0.1

155

140

Parameter

Frequency Range (RF) Upper Side Band

Frequency Range (RF) Lower Side Band

Frequency Range (LO)

Frequency Range (IF)

Input Return Loss RF (S11)

Isolation LO/RF @ LOx1/LOx2

Drain Bias Voltage (Vd1)

Drain Bias Voltage (Vd2)

Gate Bias Voltage (Vg1,2)

Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical)

Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical)

(1) Measured using constant current.

(2) Measured using LO Input drive level of +2.0 dBm.

R1006-QD

August 2007 - Rev 30-Aug-07