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DB2S310 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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DB2S310 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 4 page ![]() Ver. DED Publication date: April 2013 1 DB2S310 Silicon epitaxial planar type For high speed switching circuits DB2J310 in SSMini2 type package Features Low forward voltage VF Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: B7 Packaging DB2S31000L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Reverse voltage VR 30 V Repetitive peak reverse voltage VRRM 30 V Forward current (Average) IF(AV) 200 mA Peak forward current IFM 300 mA Non-repetitive peak forward surge current *1 IFSM 1 A Junction temperature Tj 125 ° C Operating ambient temperature Topr –40 to +85 ° C Storage temperature Tstg –55 to +125 ° C Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 200 mA 0.47 V Reverse current IR1 VR = 10 V 20 µ A IR2 VR = 30 V 200 Terminal capacitance Ct VR = 10 V, f = 1 MHz 4.5 pF Reverse recovery time *1 trr IF = IR = 100 mA, Irr = 10 mA, RL = 100 Ω 1.6 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz *1: trr measurement circuit Bias Application Unit (N-50BU) 90% Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 IF = 100 mA IR = 100 mA RL = 100 Ω 10% Irr = 10 mA tr tp trr VR IF t t A Input Pulse Output Pulse Unit: mm 1: Cathode 2: Anode Panasonic SSMini2-F5-B JEITA SC-79 Code SOD-523 |
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