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ACT3704 Datasheet(PDF) 9 Page - Active-Semi, Inc |
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ACT3704 Datasheet(HTML) 9 Page - Active-Semi, Inc |
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9 / 15 page ![]() ACT3704 Rev2, 26-Jul-07 Innovative Products. Active Solutions. - 9 - www.active-semi.com Copyright © 2007 Active-Semi, Inc. () JA BAT BAT IN A I V - V - C 120 T θ × × ° = () ( ) C 45 mA 700 3.4V - 5V - C 120 T A ° × × ° = C 6 . 69 T A ° = () () A / C 72 C 50 W / C 45 3.4V - V 5 C 70 - C 120 I BAT ° ° = ° × ° ° = mA 694 T A = (4) (5) (6) (7) Example: The ACT3704 is operating from a 5V wall adapter and is programmed to supply 700mA fast charge current to a discharged Li-Ion battery with a voltage of 3.4V. Assuming θJA is 45°C/W, the ambi- ent temperature at which the device will begin to reduce the charge current is approximately: The ACT3704 can be used above 69.6°C ambient, but the charge current will be reduced from 700mA. The approximate current at a given ambient tem- perature can be approximated by: Using the previous example with an ambient tem- perature of 70°C, the charge current will be reduced to approximately: ACT3704 applications do not need to be designed for worst-case thermal conditions, since the part will automatically reduce power dissipation if the ther- mal regulation threshold of approximately 120°C is reached. However, in order to deliver maximum charge cur- rent under all conditions, it is critical that the ex- posed metal pad on the backside of the package exposed pad (EP) is soldered directly to the PC board ground. Correctly soldered to a double sided 1oz copper board, the ACT3704 has a thermal re- sistance of approximately 45°C/W with SOP8 and 36.7°C/W with TDFN33-8. Failure to make thermal contact between the exposed pad on the backside pf the package and the copper board will result in thermal resistances far greater than 45°C/W with SOP8 and 36.7°C/W with TDFN33-8. For example, a correctly soldered ACT3704 can deliver up to () () JA BAT IN A BAT V V T C 120 I θ × − − ° = C 4 . 50 C 120 C 45 W 12 . 1 C 120 T A ° − ° = ° × − ° = JA D A P C 120 T θ × − ° = 1000mA to a battery from a 5V supply at 25°C. Without a good backside thermal connection, this number could drop to less than 500mA. State Machine Precondition State A new charging cycle begins with the PRECONDI- TION state, and operation continues in this state until VBAT exceeds the Precondition Threshold Volt- age of 2.8V. When operating in PRECONDITION state, the cell is charged at a reduced current given by: Which is 10% of the programmed maximum fast- charge constant current, IBAT. Once VBAT reaches the Precondition Threshold Volt- age the state machine jumps to the NORMAL state. If VBAT does not reach the Precondition Threshold Voltage before the Precondition Timeout period (TPRECONDITION) expires, then a damaged cell is de- tected and the state machine jumps to the TIME- OUT-FAULT State. The Precondition Timeout pe- riod is default to 20mins with an external 2.2nF CTIMER capacitor, or it can be increased with a larger value capacitor. See the Safely Timers section for more information. Normal State Normal state is made up of two operating modes, fast charge Constant-Current (CC) and Constant- Voltage (CV). In CC mode, the ACT3704 charges at the current programmed by RISET (see the Charge Current Pro- gramming section for more information). During a normal charge cycle fast-charge continues in CC mode until VBAT reaches the charge termination volt- age (VTERM), at which point the ACT3704 charges in CV mode. Charging continues in CV mode until the charge current drops to 10% of the programmed maximum charge current (IBAT), at which point the state machine jumps to the TOP-OFF state. If VBAT does not proceed out of the NORMAL state before the Normal Timeout period (TNORMAL) expires, then a damaged cell is detected and the state ma- chine jumps to the TIMEOUT-FAULT State. The Normal Timeout period is default to 30mins, or it can be increased with an external 2.2nF CTIMER capacitor or can be changed with a larger value external capacitor. See the Safety Times section for more information. ture at which the thermal regulation begins to pro- tect the IC is given by : (8) ( ) ISET ISET ON PRECONDITI R / V 200 . 2 I × = |
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