Comchip Technology CO., LTD.

Page 2

REV:A

General Purpose Transistor

Symbol

Parameter

Conditions

Min

Max

Unit

Electrical Characteristics (at TA=25°C unless otherwise noted)

Collector-base breakdown voltage

IC = 10μA, IE = 0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

DC current gain

Transition frequency

IC = 10mA, IB = 0

IE = 10μA, IC = 0

VCB = 45V, IE = 0

VCE = 1V, IC = 10mA

IC = 100mA, IB = 10mA

IC = 50mA, VCE = 5V, f = 20MHZ

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

hFE(1)

VCE(sat)

fT

V

V

V

nA

nA

V

MHZ

VCE = 1V, IC = 100mA

hFE(2)

IC = 500mA, IB = 50mA

VBE(sat)

V

Typ

Emitter cut-off current

VEB = 4V, IC = 0

IEBO

hFE(3)

IC = 500mA, IB = 50mA

VCE(sat)

Collector-emitter saturation voltage

Base-emitter saturation voltage

VCE = 10V, IC = 0.1mA

IC = 100mA, IB = 10mA

75

45

5

20

20

35

50

180

110

100

250

160

400

250

630

0.3

0.7

1.25

170

2

AQW-JTR86

VBE(sat)

ABCW66F-HF

ABCW66G-HF

ABCW66H-HF

80

75

ABCW66F-HF

ABCW66G-HF

ABCW66H-HF

ABCW66F-HF

ABCW66G-HF

ABCW66H-HF