Comchip Technology CO., LTD.

Page 2

REV:A

General Purpose Transistor

Symbol

Parameter

Conditions

Min

Max

Unit

Electrical Characteristics (at TA=25°C unless otherwise noted)

Collector-base breakdown voltage

IC = -10μA, IE = 0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

DC current gain

Transition frequency

IC = -10mA, IB = 0

IE = -10μA, IC = 0

VCB = -45V, IE = 0

VCE = -1V, IC = -10mA

IC = -100mA, IB = -10mA

IC = -50mA, VCE = -5V, f = 20MHZ

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

hFE(1)

VCE(sat)

fT

V

V

V

nA

nA

V

MHZ

VCE = -2V, IC = -500mA

hFE(2)

IC = -500mA, IB = -50mA

VBE(sat)

V

Typ

Emitter cut-off current

VEB = -4V, IC = 0

IEBO

hFE(4)

IC = -500mA, IB = -50mA

VCE(sat)

Collector-emitter saturation voltage

Base-emitter saturation voltage

VCE = -10V, IC = -0.1mA

IC = -100mA, IB = -10mA

-60

-45

-5

-20

-20

35

50

180

120

35

250

60

400

100

630

-0.3

-0.7

-1.25

200

-2

VBE(sat)

ABCW68F-HF

ABCW68G-HF

ABCW68H-HF

80

75

ABCW68F-HF

ABCW68G-HF

ABCW68H-HF

ABCW68F-HF

ABCW68G-HF

ABCW68H-HF

AQW-JTR87

ABCW68F-HF

ABCW68G-HF

ABCW68H-HF

hFE(3)

100

160

250

VCE = -1V, IC = -100mA